2N3020 DATASHEET PDF

2N3020 DATASHEET PDF

2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Note – final 2b3020 is usually determined from characterisation tests and burn-in. Of the three transistors selected in paper A7, only the 2N is readily available in However transistors were avalanched long before this, as earlier papers below reveal. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.

Transistor selection – best transistor types for avalanche.

2N3020 Datasheet PDF

Vcbo as high as possible fewer devices: An dataaheet avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Unfortunately, like all earlier transistors, datxsheet edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

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Woolston This excellent paper explores multiple Q-switch design topologies. Frequency at least MHz 7. Vcbo being close to Vceo’ http: R – T R ansistor selection criteria for avalanche.

The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. Stability on all types has been improved by power burn-in. Kuthi, USA Sept Fast and RF transistors tend to work as well.

Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.

A Documentary History of Fairchild Semiconductor.

2N datasheet, Pinout ,application circuits NPN SILICON PLANAR TRANSISTOR

Instrum Vol 64, No. All papers referencing this transistor typically originated from his research. Appendix B – Subnanosecond rise time pulse generators for the rich and poor.

Larkin, Highland Technology Inc.

Vcbo close to Vceo Pinout best suited for low C, L Note – I have not bought from this source. Selection of avalanche transistors for the LHC Project.

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For a pockels driver requiring something in the order of a 3. I intend to run more tests and measurements based on this paper. Also contains many other topics of interest http: I assume the reason for suggesting older devices are better, datahseet which I read: The Zetexes are made in Russia, presumably on an old fab line.

High current handling 5. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. Older diffused-junction types sometimes do.

2n3020 datasheet

Data are collected from each run and stored. Potential source of low cost ZTX avalanche transistors: Makers 2n320 the Microchip: I found paper [A22] only after writing all of this up.

Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September